| PART |
Description |
Maker |
| FMC2122C6-03 |
Ku K-Brand Power GaAs Modules
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| FMC2122C6-03 |
K-Band Power GaAs Modules
|
Fujitsu
|
| P1800GLRP P1500GLRP P1300GLRP P1100GLRP P2600GLRP |
Teccor? brand Protection Thyristors
Teccor㈢ brand Protection Thyristors
|
Littelfuse
|
| TQM7M4012 |
3V QUAD - BRAND GSM850/900 DCS/PCS POWER AMPLIFIER MODULE
|
TriQuint Semiconductor
|
| PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V
MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules:1200V
50Amp - intelligent power modules
|
Mitsubishi Electric Corporation
|
| S6X8ES1 S6X8BS S6X8ES2 S6X8TS S6X8TS1 S6X8TS2 S6X8 |
Teccor? brand Thyristors EV Series 0.8 Amp Sensitive SCRs
|
Littelfuse
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| VBO52-12NO7 VBO72-12NO7 VBO72-08NO7 VBO72-18NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VBO54-12NO7 VBO54-14NO7 VBO54-16NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
